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Si5511DC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
5
12
V GS = 5 V thr u 3 V
V GS = 2.5 V
4
9
6
3
0
V GS = 2 V
V GS = 1.5 V
3
2
1
0
T C = 125 °C
T C = 25 °C
T C = - 55 °C
0.0
0.6
1.2
1. 8
2.4
3.0
0.0
0.5
1.0
1.5
2.0
2.5
0.20
V DS - Drain-to-So u rce V oltage ( V )
Output Characteristics
600
V GS - Gate-to-So u rce V oltage ( V )
Transfer Characteristics
0.16
500
C iss
400
0.12
0.0 8
V GS = 2.5 V
V GS = 4.5 V
300
200
0.04
0.00
100
0
C rss
C oss
0
3
6
9
12
15
0
5
10
15
20
25
30
I D - Drain C u rrent (A)
On-Resistance vs. Drain Current and Gate Voltage
5
I D = 4. 8 A
4
V DS = 15 V
1.6
1.4
V DS - Drain-to-So u rce V oltage ( V )
Capacitance
V GS = 4.5 V
I D = 4. 8 A
3
2
1
0
V GS = 24 V
1.2
1.0
0. 8
0.6
V GS = 2.5 V
I D = 3.7 A
0
1
2
3
4
5
6
- 50
- 25
0
25
50
75
100
125
150
www.vishay.com
4
Q g - Total Gate Charge (nC)
Gate Charge
T J - J u nction Temperat u re (°C)
On-Resistance vs. Junction Temperature
Document Number: 73787
S10-0547-Rev. C, 08-Mar-10
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